SFH617 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
OPTOISOLATOR 5.3KV TRANS 4DIP
| Part | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) [Max] | Current - Output / Channel | Current - DC Forward (If) (Max) [Max] | Mounting Type | Number of Channels | Input Type | Current Transfer Ratio (Min) [Min] | Supplier Device Package | Voltage - Isolation | Current Transfer Ratio (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Output Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case | Voltage - Output (Max) [Max] | Voltage - Forward (Vf) (Typ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 63 % | 4-DIP | 5300 Vrms | 125 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP (0.300" 7.62mm) | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 63 % | 4-DIP | 5300 Vrms | 125 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 100 % | 4-DIP | 5300 Vrms | 200 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 40 % | 4-DIP | 5300 Vrms | 80 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 63 % | 4-DIP | 5300 Vrms | 125 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 40 % | 4-DIP | 5300 Vrms | 80 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP (0.300" 7.62mm) | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Through Hole | 1 | DC | 160 % | 4-DIP | 5300 Vrms | 320 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-DIP (0.300" 7.62mm) | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Surface Mount | 1 | DC | 100 % | 4-SMD | 5300 Vrms | 200 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-SMD Gull Wing | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Surface Mount | 1 | DC | 63 % | 4-SMD | 5300 Vrms | 125 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-SMD Gull Wing | 70 V | 1.35 V |
Vishay General Semiconductor - Diodes Division | 2.3 µs 3 µs | 400 mV | 50 mA | 60 mA | Surface Mount | 1 | DC | 63 % | 4-SMD | 5300 Vrms | 125 % | -55 °C | 110 °C | 1.81 mOhm | 2 µs | 2 µs | 4-SMD Gull Wing | 70 V | 1.35 V |