IRFD123 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 1.3A 4DIP
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 10 V | 4-DIP (0.300" 7.62mm) | 1.3 W | MOSFET (Metal Oxide) | 270 mOhm | Through Hole | 20 V | 4 V | 360 pF | 1.3 A | N-Channel | 16 nC | 100 V |