FOD785 Series

4-Pin DIP Phototransistor Optocouplers

Catalog

4-Pin DIP Phototransistor Optocouplers

Part	Current - Output / Channel	Number of Channels	Current Transfer Ratio (Min) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Output Type	Rise / Fall Time (Typ) [Max]	Rise / Fall Time (Typ)	Package / Case	Current Transfer Ratio (Max) [Max]	Mounting Type	Input Type	Vce Saturation (Max)	Supplier Device Package	Current - DC Forward (If) (Max)	Current Transfer Ratio (Max)
ON Semiconductor FOD785D	50 mA	1	300 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-DIP (0.300" 7.62mm)	600 %	Through Hole	DC	200 mV	4-PDIP	50 mA
ON Semiconductor FOD785B	50 mA	1	130 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-DIP (0.300" 7.62mm)		Through Hole	DC	200 mV	4-PDIP	50 mA	260 %
ON Semiconductor FOD785BSD	50 mA	1	130 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-SMD Gull Wing		Surface Mount	DC	200 mV	4-PDIP-GW	50 mA	260 %
ON Semiconductor FOD785CSD	50 mA	1	200 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-SMD Gull Wing		Surface Mount	DC	200 mV	4-PDIP-GW	50 mA	400 %
ON Semiconductor FOD785DSD	50 mA	1	300 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-SMD Gull Wing	600 %	Surface Mount	DC	200 mV	4-PDIP-GW	50 mA
ON Semiconductor FOD785ASD	50 mA	1	80 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-SMD Gull Wing	160 %	Surface Mount	DC	200 mV	4-PDIP-GW	50 mA
ON Semiconductor FOD785A	50 mA	1	80 %	-55 °C	110 °C	1.81 mOhm	18 µs	18 µs	4-DIP (0.300" 7.62mm)	160 %	Through Hole	DC	200 mV	4-PDIP	50 mA

Catalog

4-Pin DIP Phototransistor Optocouplers

Key Features

• Wide Selection in Current Transfer Ratio (CTR):FOD785: 50 – 600%FOD785A: 80 – 160%FOD785B: 130 – 260%FOD785C: 200 – 400%FOD785D: 300 – 600%

• Safety and Regulatory Approvals:♦ UL1577, 5,000 VACRMS for 1 Minute♦ DIN EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Description

The FOD785 series is a general−purpose family of phototransistor optocoupler. It is offered in various CTR bins to meet the needs of most applications. It consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4−pin dual in−line package.