SN74LVC1G332 Series

1-ch, 3-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Catalog

1-ch, 3-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Part	Logic Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Max Propagation Delay @ V, Max CL	Supplier Device Package	Current - Output High, Low [y]	Current - Output High, Low [x]	Current - Quiescent (Max) [Max]	Number of Circuits	Number of Inputs	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Max Propagation Delay @ V, Max CL [Max]
Texas Instruments SN74LVC1G332DRY2	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-UFDFN	4.5 ns	6-SON (1.45x1)	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332YZPR	OR Gate	Surface Mount	85 °C	-40 °C	5.5 V	1.65 V	6-XFBGA DSBGA		6-DSBGA	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V	3.5 ns
Texas Instruments SN74LVC1G332DCKRG4	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-TSSOP SC-88 SOT-363	4.5 ns	SC-70-6	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments 74LVC1G332DCKRG4	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-TSSOP SC-88 SOT-363		SC-70-6	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V	3.5 ns
Texas Instruments 74LVC1G332DCKRE4	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-TSSOP SC-88 SOT-363	4.5 ns	SC-70-6	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332DBVR	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	SOT-23-6	4.5 ns	SOT-23-6	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332DRLR	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	SOT-563 SOT-666	4.5 ns	SOT-5X3	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332DSF2	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-XFDFN	4.5 ns	6-SON (1x1)	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332DRYR	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-UFDFN	4.5 ns	6-SON (1.45x1)	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G332DCKR	OR Gate	Surface Mount	125 °C	-40 °C	5.5 V	1.65 V	6-TSSOP SC-88 SOT-363	4.5 ns	SC-70-6	32 mA	32 mA	10 µA	1	3	0.8 V	0.7 V	1.7 V	2 V

Catalog

1-ch, 3-input 1.65-V to 5.5-V 32-mA drive strength OR gate

Key Features

• Available in the Texas Instruments NanoStar and NanoFree PackagesSupports 5-V VCCOperationInputs Accept Voltages to 5.5 VSupports Down Translation to VCCMax tpdof 4.5 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionLatch-Up Performance Exceeds 100 mA PerJESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)Available in the Texas Instruments NanoStar and NanoFree PackagesSupports 5-V VCCOperationInputs Accept Voltages to 5.5 VSupports Down Translation to VCCMax tpdof 4.5 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionLatch-Up Performance Exceeds 100 mA PerJESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)

Description

The SN74LVC1G332 device performs the Boolean function in positive logic. NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. The SN74LVC1G332 device performs the Boolean function in positive logic. NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.