FDD8896_F085 Series

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Catalog

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Qualification	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Grade	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
ON Semiconductor FDD8896-F085	60 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	MOSFET (Metal Oxide)	17 A 94 A	-55 °C	175 ░C	Surface Mount	AEC-Q101	80 W	2.5 V	Automotive	2525 pF	TO-252 (DPAK)	5.7 mOhm	20 V	4.5 V 10 V	N-Channel

Catalog

N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

Key Features

• rDS(ON)= 5.7mΩ, VGS= 10V, ID= 35A

• rDS(ON)= 6.8mΩ, VGS= 4.5V, ID= 35A

• High performance trench technology for extremely low rDS(ON)

• Low gate charge

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON)and fast switching speed.