2SK3309 Series

Catalog

MOSFET N-CH 450V 10A TO220SM

Part	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage 2SK3309(TE24L,Q)	30 V	Surface Mount	23 nC	920 pF	150 °C	5 V	10 A	TO-220SM	450 V	N-Channel	MOSFET (Metal Oxide)	65 W	650 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V
Toshiba Semiconductor and Storage 2SK3309(Q)	30 V	Through Hole	23 nC	920 pF	150 °C	5 V	10 A	TO-220FL	450 V	N-Channel	MOSFET (Metal Oxide)	65 W	650 mOhm	TO-220-3 Short Tab	10 V