SI4829 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 20V 2A 8SO
| Part | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 12 V | 2 W 3.1 W | 2 A | 8 nC | MOSFET (Metal Oxide) | 8-SOIC | 210 pF | 2.5 V 4.5 V | -55 °C | 150 °C | Schottky Diode (Isolated) | 215 mOhm | 20 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 1.5 V | P-Channel |