SI6925 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 20V 3.3A 8TSSOP
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [custom] | Package / Case [custom] | Drain to Source Voltage (Vdss) | Technology | Configuration | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 45 mOhm | 1.8 V | Surface Mount | 8-TSSOP | -55 °C | 150 °C | 8-TSSOP | 0.173 " | 4.4 mm | 20 V | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 6 nC | 3.3 A | 800 mW |