GBU4 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

BRIDGE RECT 1PHASE 800V 4A GBU

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division GBU4K-M3/51	-55 °C	150 °C	800 V	GBU	4-SIP GBU	Through Hole	Single Phase	4 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4A-1M3/51	-55 °C	150 °C	50 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4JL-6088E3/45	-55 °C	150 °C	600 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4DL-6419E3/51	-55 °C	150 °C	200 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4DL-5303E3/45	-55 °C	150 °C	200 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4G-E3/51	-55 °C	150 °C	400 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4K-M3/45	-55 °C	150 °C	800 V	GBU	4-SIP GBU	Through Hole	Single Phase	4 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4K-E3/45	-55 °C	150 °C	800 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4JL-6088M3/51	-55 °C	150 °C	600 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA
Vishay General Semiconductor - Diodes Division GBU4J-E3/45	-55 °C	150 °C	600 V	GBU	4-SIP GBU	Through Hole	Single Phase	3 A	1 V	Standard	5 µA