SH8J66 Series

-30V Pch+Pch Power MOSFET

Catalog

-30V Pch+Pch Power MOSFET

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Package / Case	Package / Case	Package / Case	Configuration
Rohm Semiconductor SH8J66TB1	MOSFET (Metal Oxide)	3000 pF	Surface Mount	30 V	35 nC	2 W	Logic Level Gate	8-SOP	2.5 V	18.5 mOhm	9 A	150 °C	0.154 in	8-SOIC	3.9 mm	2 P-Channel (Dual)

Catalog

-30V Pch+Pch Power MOSFET

Description

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.