SI1056 Series

Catalog

MOSFET N-CH 20V SC89-6

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SI1056X-T1-GE3	N-Channel	1.32 A	950 mV	-55 °C	150 °C	400 pF	89 mOhm	SC-89 (SOT-563F)	8.7 nC	MOSFET (Metal Oxide)	1.8 V 4.5 V	8 V	20 V	SOT-563 SOT-666	236 mW	Surface Mount
Vishay General Semiconductor - Diodes Division SI1056X-T1-E3	N-Channel	1.32 A	950 mV	-55 °C	150 °C	400 pF	89 mOhm	SC-89 (SOT-563F)	8.7 nC	MOSFET (Metal Oxide)	1.8 V 4.5 V	8 V	20 V	SOT-563 SOT-666	236 mW	Surface Mount