NVMFD024N06C Series

Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

Catalog

Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

Part	Configuration	Qualification	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Grade	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
ON Semiconductor NVMFD024N06CT1G	2 N-Channel (Dual)	AEC-Q101	60 V	-55 °C	175 ░C	8 A 24 A	8-DFN (5x6) Dual Flag (SO8FL-Dual)	MOSFET (Metal Oxide)	22.6 mOhm	Surface Mount	Automotive	4 V	5.7 nC	333 pF	8-PowerTDFN

Catalog

Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVMFWD024N06C − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.