GB02SHT03 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARBIDE 300V 4A TO46
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Technology | Supplier Device Package | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 300 V | Through Hole | 500 mA | 225 °C | -55 °C | 0 ns | SiC (Silicon Carbide) Schottky | TO-46 | 76 pF | 5 µA | 4 A | TO-206AB TO-46-3 Metal Can |