SI4484 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 4.8A 8SO
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 6 V 10 V | 1.8 W | 34 mOhm | N-Channel | 30 nC | 8-SOIC | 2 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 20 V | -55 °C | 175 ░C | 100 V | 4.8 A | MOSFET (Metal Oxide) |