SQJ140 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 266A PPAK SO-8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Grade | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Qualification | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | N-Channel | 3855 pF | 266 A | 40 V | Automotive | MOSFET (Metal Oxide) | 20 V | 3.5 V | 2.1 mOhm | Surface Mount | PowerPAK® SO-8 | AEC-Q101 | 64 nC | 10 V | PowerPAK® SO-8 | 263 W |