SIHB15 Series

Catalog

MOSFET N-CH 650V 15A TO263

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHB15N65E-GE3	1640 pF	30 V	N-Channel	96 nC	650 V	10 V	TO-263 (D2PAK)	Surface Mount	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	280 mOhm	15 A	4 V	34 W
Vishay General Semiconductor - Diodes Division SIHB15N80AE-GE3		30 V	N-Channel		800 V	10 V	TO-263 (D2PAK)	Surface Mount	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	350 mOhm	13 A	4 V	156 W	1093 pF	53 nC