HT8KE6 Series

100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET

Catalog

100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id [Max]	Technology	Package / Case
Rohm Semiconductor HT8KE6TB1	150 °C	305 pF	6.7 nC	2 W 14 W	4.5 A 13 A	2 N-Channel	100 V	8-HSMT (3.2x3)	Surface Mount	2.5 V	MOSFET (Metal Oxide)	8-PowerVDFN

100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET

• Low on - resistance, High Power small mold Package (HSMT8), Pb-free plating; RoHS compliant, Halogen Free

HT8KE6 is a low on-resistance MOSFET ideal for switching applications.