Catalog
100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET
Description
AI
HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
Beta
⌘K
100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET
100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET
| Part | Configuration | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology | Vgs(th) (Max) @ Id | Supplier Device Package [x] | Supplier Device Package [custom] | Supplier Device Package [y] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Power - Max | Current - Continuous Drain (Id) @ 25°C | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2 N-Channel 2 N-Channel (Dual) | 6.7 nC | Surface Mount | MOSFET (Metal Oxide) | 2.5 V | 3.2 | 8-HSMT | 3 | 100 V | 305 pF | 8-PowerVDFN | 2 W 14 W | 4.5 A 13 A | 150 °C |