R6030JNZ4 Series

600V 30A TO-247, PrestoMOS™ with integrated high-speed diode

Catalog

600V 30A TO-247, PrestoMOS™ with integrated high-speed diode

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6030JNZ4C13	30 A	150 °C	-55 °C	370 W	600 V	N-Channel	30 V	7 V	TO-247-3	15 V	MOSFET (Metal Oxide)	TO-247G	143 mOhm	74 nC	Through Hole	2500 pF

Catalog

600V 30A TO-247, PrestoMOS™ with integrated high-speed diode

Description

R6030JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).