SI2302 Series

Catalog

MOSFET N-CH 20V 2.1A SOT23-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI2302ADS-T1-GE3	2.5 V 4.5 V	700 mW	10 nC	-55 °C	150 °C	8 V	SOT-23-3 (TO-236)	N-Channel	60 mOhm	2.1 A	20 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	Surface Mount	1.2 V	300 pF
Vishay General Semiconductor - Diodes Division SI2302ADS-T1-E3	2.5 V 4.5 V	700 mW	10 nC	-55 °C	150 °C	8 V	SOT-23-3 (TO-236)	N-Channel	60 mOhm	2.1 A	20 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	Surface Mount	1.2 V	300 pF
Vishay General Semiconductor - Diodes Division SI2302ADS-T1	2.5 V 4.5 V	700 mW	10 nC	-55 °C	150 °C	8 V	SOT-23-3 (TO-236)	N-Channel	60 mOhm	2.1 A	20 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	Surface Mount	1.2 V	300 pF