GC50MPS12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 212A TO247
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Mounting Type | Package / Case | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If [Max] | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Supplier Device Package | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -55 °C | 0 ns | Through Hole | TO-247-2 | 3263 pF | 1.8 V | 500 mA | 40 µA | 1.2 kV | SiC (Silicon Carbide) Schottky | TO-247-2 | 212 A |