FCP20N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FCP20N60_F080	3080 pF	TO-220-3	N-Channel	208 W	600 V	98 nC	10 V	MOSFET (Metal Oxide)	TO-220-3	5 V	30 V	20 A	Through Hole	190 mOhm	-55 °C	150 °C
ON Semiconductor FCP20N60_G	3080 pF	TO-220-3	N-Channel	208 W	600 V	98 nC	10 V	MOSFET (Metal Oxide)	TO-220-3	5 V	30 V	20 A	Through Hole	190 mOhm	-55 °C	150 °C
ON Semiconductor FCP20N60	3080 pF	TO-220-3	N-Channel	208 W	600 V	98 nC	10 V	MOSFET (Metal Oxide)	TO-220-3	5 V	30 V	20 A	Through Hole	190 mOhm	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

Key Features

• 650V @ TJ= 150°C

• Typ. RDS(on)= 150 mΩ

• Ultra Low Gate Charge (Typ. Qg= 75 nC )

• Low Effective Output Capacitance (Typ. Coss(eff.)= 165 pF )

• 100% Avalanche Tested

Description

SuperFET® MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.