Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-416(SSM)
Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-416(SSM)
Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-416(SSM)
| Part | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Vce Saturation (Max) @ Ib, Ic | Package / Case | Supplier Device Package | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Surface Mount | 100 mW | 50 V | 500 nA | 80 mA | 80 | PNP - Pre-Biased | 4.7 kOhms | 47 kOhms | 150 mV | SC-101 SOT-883 | CST3 | |
 Toshiba Semiconductor and Storage | Surface Mount | 150 mW | 50 V | 500 nA | 100 mA | 80 | PNP - Pre-Biased | 4.7 kOhms | 47 kOhms | 300 mV | SOT-723 | VESM | 250 MHz |