CSD17555Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.7 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.7 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Texas Instruments CSD17555Q5A	28 nC	N-Channel	4.5 V 10 V	1.9 V	30 V	8-PowerTDFN	4650 pF	20 V	-55 °C	150 °C	24 A 100 A	8-VSONP (5x6)	MOSFET (Metal Oxide)	Surface Mount	3 W	2.7 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.7 mOhm

Key Features

• Ultralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications.