GD25Q16 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 16MBIT SPI/QUAD 8SOP
| Part | Technology | Memory Size | Memory Interface | Operating Temperature [Min] | Operating Temperature [Max] | Memory Organization [custom] | Memory Organization [custom] | Clock Frequency | Access Time | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Memory Format | Memory Type | Supplier Device Package | Package / Case | Package / Case | Package / Case | Write Cycle Time - Word, Page | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | 2 MB | SPI - Quad I/O | -40 °C | 105 °C | 2 M | 8 | 133 MHz | 7 ns | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 0.154 in | 8-SOIC | 3.9 mm | 4 ms 140 µs | |||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 0.154 in | 8-SOIC | 3.9 mm | 50 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | 2 MB | SPI - Quad I/O | -40 °C | 125 °C | 2 M | 8 | 133 MHz | 7 ns | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 0.154 in | 8-SOIC | 3.9 mm | 4 ms 140 µs | |||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-USON (4x3) | 8-UDFN Exposed Pad | 50 µs | 2.4 ms | |||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-WSON (5x6) | 8-WDFN Exposed Pad | 50 µs | 2.4 ms | |||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 133 MHz | 7 ns | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-USON (4x4) | 8-XDFN Exposed Pad | 70 µs | 2 ms | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 °C | 105 °C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 8-SOIC | 50 µs | 2.4 ms | 0.209 in 5.3 mm | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 0.154 in | 8-SOIC | 3.9 mm | 50 µs | 2.4 ms | |||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | 2 MB | SPI - Quad I/O | -40 °C | 105 °C | 2 M | 8 | 133 MHz | 7 ns | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-USON (3x2) | 8-XFDFN Exposed Pad | 4 ms 140 µs | |||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | 2 MB | SPI - Quad I/O | -40 ¯C | 85 C | 2 M | 8 | 120 MHz | 3.6 V | 2.7 V | Surface Mount | FLASH | Non-Volatile | 8-SOP | 8-SOIC | 50 µs | 2.4 ms | 0.209 in 5.3 mm |