GB10SLT12 Series

Catalog

DIODE SIL CARB 1.2KV 10A TO252

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Mounting Type	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Diode Configuration
GeneSiC Semiconductor GB10SLT12-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 V	0 ns	520 pF	Surface Mount	500 mA	10 A	250 µA	TO-252	SiC (Silicon Carbide) Schottky	1.2 kV	175 ░C	-55 °C
GeneSiC Semiconductor GB10SLT12-220	TO-220-2		0 ns	520 pF	Through Hole	500 mA	10 A	40 µA	TO-220-2	SiC (Silicon Carbide) Schottky	1.2 kV	175 ░C	-55 °C	1.8 V
GeneSiC Semiconductor GB10SLT12-247D	TO-247-3				Through Hole	200 mA 500 ns		50 µA	TO-247	SiC (Silicon Carbide) Schottky	1.2 kV	175 ░C	-55 °C	1.9 V	12 A	1 Pair Common Cathode