EL3H4 Series

Manufacturer: Everlight Electronics Co Ltd

Catalog

OPTOISOLATOR 3.75KV TRANS 4-SSOP

Part	Vce Saturation (Max) [Max]	Output Type	Current Transfer Ratio (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Min)	Supplier Device Package	Package / Case [x]	Package / Case	Package / Case [y]	Number of Channels [custom]	Voltage - Isolation	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Max)	Current Transfer Ratio (Min) [Min]
Everlight Electronics Co Ltd EL3H4(A)(TB)-VG	200 mV	Transistor	150 %	Surface Mount	100 °C	-55 C	50 %	4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA
Everlight Electronics Co Ltd EL3H4(A)(TA)-G	200 mV	Transistor	150 %	Surface Mount	100 °C	-55 C	50 %	4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA
Everlight Electronics Co Ltd EL3H4(TB)-VG	200 mV	Transistor		Surface Mount	100 °C	-55 C		4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA	300 %	20 %
Everlight Electronics Co Ltd EL3H4-VG	200 mV	Transistor		Surface Mount	100 °C	-55 C		4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA	300 %	20 %
Everlight Electronics Co Ltd EL3H4(A)(EA)-G	200 mV	Transistor	150 %	Surface Mount	100 °C	-55 C	50 %	4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA
Everlight Electronics Co Ltd EL3H4(EB)-G	200 mV	Transistor		Surface Mount	100 °C	-55 C		4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA	300 %	20 %
Everlight Electronics Co Ltd EL3H4(A)(TA)-VG	200 mV	Transistor	150 %	Surface Mount	100 °C	-55 C	50 %	4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA
Everlight Electronics Co Ltd EL3H4(TB)-G	200 mV	Transistor		Surface Mount	100 °C	-55 C		4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA	300 %	20 %
Everlight Electronics Co Ltd EL3H4(A)-G	200 mV	Transistor	150 %	Surface Mount	100 °C	-55 C	50 %	4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA
Everlight Electronics Co Ltd EL3H4-G	200 mV	Transistor		Surface Mount	100 °C	-55 C		4-SSOP	0.173 "	4-SOIC	4.4 mm	1	3750 Vrms	6 µs	8 µs	50 mA	300 %	20 %