EL7154 Series

High Speed, Monolithic Pin Driver

Manufacturer: Renesas Electronics Corporation

Catalog

High Speed, Monolithic Pin Driver

Part	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Supply [Min]	Voltage - Supply [Max]	Driven Configuration	Input Type	Channel Type	Supplier Device Package	Gate Type	Number of Drivers	Package / Case	Package / Case
Renesas Electronics Corporation EL7154CSZ-T13	2.4 V	0.6 V	4 ns	4 ns	-40 °C	125 ¯C	4 A	4 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	4.5 V	16 V	High-Side Low-Side	Non-Inverting	Synchronous	8-SOIC	IGBT N-Channel MOSFET	2
Renesas Electronics Corporation EL7154CN	2.4 V	0.6 V	4 ns	4 ns	-40 °C	125 ¯C	4 A	4 A	Through Hole	8-DIP			4.5 V	16 V	High-Side Low-Side	Non-Inverting	Synchronous	8-PDIP	IGBT N-Channel MOSFET	2	0.3 in	7.62 mm

Catalog

High Speed, Monolithic Pin Driver

Description

The EL7154 three-state pin driver is particularly well suited for ATE and level shifting applications. The 4A peak drive capability, makes the EL7154 an excellent choice when driving High-Speed capacitive lines. The P-Channel MOSFET is completely isolated from the power supply, providing a high degree of flexibility. Pin (7) can be grounded, and the output can be taken from pin (8) when a source follower output is desired. The N-Channel MOSFET has an isolated drain, but shares a common bus with pre-drivers and level shifter circuits. This is necessary to ensure that the N-Channel device can turn off effectively when VLgoes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VLto a moderate negative potential.