Catalog
650V 30A TO-3PF, Low-noise Power MOSFET
Description
AI
R6530ENZ is a power MOSFET with low ON-resistance and fast switching speed, suitable for switching.
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650V 30A TO-3PF, Low-noise Power MOSFET
650V 30A TO-3PF, Low-noise Power MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Mounting Type | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 10 V | MOSFET (Metal Oxide) | TO-3P-3 Full Pack | 4 V | 90 nC | 86 W | N-Channel | 30 A | TO-3PF | 20 V | Through Hole | 150 °C | 2100 pF | 140 mOhm | 650 V |