MJE5851 Series

8.0 A, 350 V PNP Bipolar Power Transistor

Catalog

8.0 A, 350 V PNP Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type
ON Semiconductor MJE5851	350 V	TO-220-3	TO-220	150 °C	-65 °C	Through Hole	5 V	8 A	5 hFE	80 W	PNP

Catalog

8.0 A, 350 V PNP Bipolar Power Transistor

Key Features

• Pb-Free Packages are Available

Description

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.