SIB414 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 8V 9A PPAK SC75-6
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 732 pF | -55 °C | 150 °C | 1 V | 1.2 V 4.5 V | 5 V | MOSFET (Metal Oxide) | 2.4 W 13 W | N-Channel | 14.03 nC | Surface Mount | 26 mOhm | PowerPAK® SC-75-6 | 9 A | 8 V | PowerPAK® SC-75-6 |