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650V 20A TO-3PF, Low-noise Power MOSFET
Description
AI
R6520ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
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650V 20A TO-3PF, Low-noise Power MOSFET
650V 20A TO-3PF, Low-noise Power MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Vgs (Max) | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1400 pF | 4 V | 150 °C | 10 V | Through Hole | 650 V | 20 A | N-Channel | 61 nC | TO-3PF | MOSFET (Metal Oxide) | 20 V | TO-3P-3 Full Pack | 68 W |