FFSB3065B-F085 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, D2PAK

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, D2PAK

Part	Current - Average Rectified (Io)	Speed	Grade	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Package / Case	Supplier Device Package
ON Semiconductor FFSB3065B-F085	73 A	No Recovery Time	Automotive	40 µA	650 V	Surface Mount	1.7 V	0 ns	AEC-Q101	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	1280 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, D2PAK

Key Features

• Max Junction Temperature 175°C

• Avalanche Rated 144 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• AEC−Q101 Qualified and PPAP Capable

Description

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.