BCP56-16 Series

1.0 A, 80 V NPN Bipolar Junction Transistor

Catalog

1.0 A, 80 V NPN Bipolar Junction Transistor

Part	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Qualification	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor SBCP56-16T1G	Surface Mount	NPN	1 A	TO-261-4 TO-261AA	100 nA	Automotive	100	150 °C	-65 °C	SOT-223 (TO-261)	AEC-Q101	130 MHz	1.5 W	80 V	500 mV

Catalog

1.0 A, 80 V NPN Bipolar Junction Transistor

Key Features

• Collector current, IC= of 1.0 Amp

• The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die

• S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Description

This 1.0 A, 80 V NPN Bipolar Junction Transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.PNP Complement:BCP53Different hFE windows available:BCP56: 40 - 250BCP56-10: 63 - 160BCP56-16: 100 - 250