1N8033 Series

Catalog

DIODE SIL CARB 650V 4.3A TO276

Part	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor 1N8033-GA	TO-276AA	-55 °C	250 °C	274 pF	SiC (Silicon Carbide) Schottky	Surface Mount	5 µA	650 V	500 mA	0 ns	4.3 A	TO-276	1.65 V