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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | SOT-23-6 | 40 V | P-Channel | Surface Mount | 15.8 nC | 1.1 W | SOT-26 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 80 mOhm | 2.9 A | 20 V | 833 pF | 3 V | 4.5 V 10 V | ||
 Diodes Inc | SOT-23-6 | 40 V | P-Channel | Surface Mount | 15.8 nC | 1.1 W | SOT-26 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 80 mOhm | 2.9 A | 20 V | 833 pF | 3 V | 4.5 V 10 V | AEC-Q101 | Automotive |