NP110N04 Series
Manufacturer: Renesas Electronics Corporation
MOSFET N-CH 40V 110A TO263
| Part | Supplier Device Package | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | TO-263 | 20 V | MOSFET (Metal Oxide) | 10 V | 4 V | 1.8 mOhm | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 40 V | 175 °C | 390 nC | Surface Mount | 25700 pF | 110 A | 1.8 W 288 W |