SI4967 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 12V 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Feature | Technology | Configuration | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 12 V | 8-SOIC | Surface Mount | 23 mOhm | 450 mV | Logic Level Gate | MOSFET (Metal Oxide) | 2 P-Channel | 2 W | 8-SOIC | 3.9 mm | 0.154 in |