GAN7R0 Series

Catalog

150 V, 7 MOHM GALLIUM NITRIDE (G

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type
Freescale Semiconductor - NXP GAN7R0-150LBEZ	7 mOhm	865 pF	6 V	-4 V	7.6 nC	3-FCLGA (3.2x2.2)	28 W	28 A	150 V	GaNFET (Gallium Nitride)	5 V	N-Channel	3-VLGA	150 °C	-40 °C	2.1 V	Surface Mount