CSD17506Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD17506Q5A	8-PowerTDFN	11 nC	4.5 V 10 V	8-VSONP (5x6)	N-Channel	-55 °C	150 °C	1.8 V	30 V	3.2 W	100 A	20 V	Surface Mount	4 mOhm	MOSFET (Metal Oxide)	1650 pF

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm

Key Features

• Ultralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom, and Computing SystemsSynchronous or Control FET ApplicationsUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom, and Computing SystemsSynchronous or Control FET Applications

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications.