NCD57252 Series

Isolated Dual-Channel IGBT Gate Driver

Catalog

Isolated Dual-Channel IGBT Gate Driver

Part	Grade	Approval Agency	Supplier Device Package	Common Mode Transient Immunity (Min) [Min]	Number of Channels [custom]	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Current - Peak Output	Pulse Width Distortion (Max) [Max]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Package / Case	Package / Case [x]	Package / Case [y]	Technology	Voltage - Isolation	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output Supply
ON Semiconductor NCV57255DR2G	Automotive	VDE	16-SOIC	100 V/ns	2	AEC-Q100	125 °C	-40 °C	3.5 A 6.5 A	20 ns	3.5 A	3.5 A	16-SOIC	0.154 in	3.9 mm	Capacitive Coupling	2500 Vrms	Surface Mount	12 ns	10 ns	32 V
ON Semiconductor NCD57252DWR2G	Automotive	VDE	16-SOIC	100 V/ns	2	AEC-Q100	125 °C	-40 °C	6.5 A	10 ns	6.5 A	6.5 A	16-SOIC	0.295 in	7.5 mm	Capacitive Coupling		Surface Mount	12 ns	10 ns	32 V
ON Semiconductor NCD57255DR2G		VDE	16-SOIC	100 V/ns	2		125 °C	-40 °C	3.5 A 6.5 A	20 ns	3.5 A	3.5 A	16-SOIC	0.154 in	3.9 mm	Capacitive Coupling	2500 Vrms	Surface Mount	12 ns	10 ns	32 V
ON Semiconductor NCV57252DWR2G	Automotive	VDE	16-SOIC	100 V/ns	2	AEC-Q100	125 °C	-40 °C	6.5 A	10 ns	6.5 A	6.5 A	16-SOIC	0.295 in	7.5 mm	Capacitive Coupling		Surface Mount	12 ns	10 ns	32 V

Catalog

Isolated Dual-Channel IGBT Gate Driver

Key Features

• High Peak Output Current (±6.5 A, ±3.5 A)

• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver

• Tight UVLO Thresholds on all Power Supplies

• 3.3 V, 5 V, and 15 V Logic Input

• 2.5 or 5 kVrms Galvanic Isolation from Input to each Output and 1.5 kVrms Differential Voltage between Output Channels

• Short Propagation Delays with Accurate Matching

• Programmable Overlap or Dead Time controlProgrammable Overlap or Dead Time control

• Disable Pin to Turn Off Outputs for Power Sequencing

• ANB Function to Offer Flexibility to Set up the Driver asHalf−bridge Driver Operating with a Single Input Signal

• IGBT/MOSFET Gate Clamping during Short Circuit

Description

NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 and narrow-body SOIC−16 packages.