FDD3860 Series

N-Channel PowerTrench® MOSFET, 100 V, 29 A, 36 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 100 V, 29 A, 36 mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type
ON Semiconductor FDD3860	-55 °C	150 °C	3.1 W 69 W	31 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	36 mOhm	Surface Mount	6.2 A	10 V	MOSFET (Metal Oxide)	TO-252AA	20 V	100 V	4.5 V	1740 pF	N-Channel

Catalog

N-Channel PowerTrench® MOSFET, 100 V, 29 A, 36 mΩ

Key Features

• Max rDS(on)= 36mΩ at VGS= 10V, ID= 5.9A

• High performance trench technology for extremely low rDS(on)

• 100% UIL tested

• RoHS Compliant

Description

Using a proprietary high density trench MOSFET process, this part is tailored for low rDS(on)and low Qgfigure of merit and with avalanche ruggedness for a wide range of switching applications.