SI4410 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 7.5A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Technology | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 7.5 A | 1.4 W | -55 °C | 150 °C | 13.5 mOhm | MOSFET (Metal Oxide) | N-Channel | Surface Mount | 30 V | 3 V | 10 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 20 nC |