NCP5106 Series

MOSFET / IGBT Drivers, High Voltage, High and Low Side

Catalog

MOSFET / IGBT Drivers, High Voltage, High and Low Side

Part	Supplier Device Package	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Channel Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]
ON Semiconductor NCP5106BMNTWG	10-DFN (4x4)	IGBT N-Channel MOSFET	20 V	10 VDC	10-VDFN Exposed Pad	Independent	2.3 V	0.8 V	-40 °C	125 ¯C	Half-Bridge	Surface Mount	85 ns	35 ns	2	Non-Inverting	500 mA	250 mA	600 V

Catalog

MOSFET / IGBT Drivers, High Voltage, High and Low Side

Key Features

• High Voltage Range: Up to 600 V

• dV/dt Immunity ± 50 V/nsec

• Gate Drive Supply Range from 10 V to 20 V

• High and Low Drive Outputs

• Output Source / Sink Current Capability 250 mA / 500 mA

• 3.3 V and 5 V Input Logic Compatible

• Up to Vcc Swing on Input Pins

• Matched Propagation Delays Between Both Channels

• Outputs in Phase with the Inputs

• Independent Logic Inputs to Accommodate All Topologies (Version A)

• Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B )

• Under Vcc LockOut (UVLO) for Both Channels

• Pin-to-Pin Compatible with Industry Standards

Description

The NCP5106 is a High Voltage gate Driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration version B or any other high-side + low-side configuration version A.It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs.NCP5109 = 200VNCP5106 = 600V