SIRA50 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 54.8A/219A PPAK
| Part | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | Surface Mount | 4.5 V 10 V | N-Channel | -55 °C | 150 °C | 2.2 V | 150 nC | -16 V 20 V | 40 V | 7300 pF | PowerPAK® SO-8 | 6.25 W 100 W | 54.8 A 219 A | 1.04 mOhm | MOSFET (Metal Oxide) |