NJT4031N Series

3.0 A, 40 V NPN Bipolar Power Transistor

Catalog

3.0 A, 40 V NPN Bipolar Power Transistor

Part	Power - Max [Max]	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor NJV4031NT1G	2 W	TO-261-4 TO-261AA	Surface Mount	40 V	NPN	SOT-223 (TO-261)	-55 °C	150 °C	100 nA	3 A	200 hFE	215 MHz	300 mV
ON Semiconductor NJT4031NT1G	2 W	TO-261-4 TO-261AA	Surface Mount	40 V	NPN	SOT-223 (TO-261)	-55 °C	150 °C	100 nA	3 A	200 hFE	215 MHz	300 mV
ON Semiconductor NJT4031NT3G	2 W	TO-261-4 TO-261AA	Surface Mount	40 V	NPN	SOT-223 (TO-261)	-55 °C	150 °C	100 nA	3 A	200 hFE	215 MHz	300 mV

Catalog

3.0 A, 40 V NPN Bipolar Power Transistor

Key Features

• Low Collector-Emitter Saturation Voltage

• High DC Current Gain

• High Current-Gain Bandwidth Product

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Description

The combination of low saturation voltage and high gain makes this Bipolar Power Transistor an ideal device for high speed switching applications where power saving is a concern.