SIHH120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 24A PPAK 8 X 8
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 24 A | PowerPAK® 8 x 8 | 10 V | 30 V | 600 V | 8-PowerTDFN | 5 V | 120 mOhm | 1600 pF | 44 nC | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | N-Channel | 156 W |