SISS66 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 49.1/178.3A PPAK
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -16 V 20 V | 1.38 mOhm | 85.5 nC | PowerPAK® 1212-8S | 5.1 W 65.8 W | 3327 pF | Schottky Diode (Body) | MOSFET (Metal Oxide) | 30 V | 49.1 A 178.3 A | -55 °C | 150 °C | PowerPAK® 1212-8S | 2.5 V | N-Channel | 4.5 V 10 V | Surface Mount |