IRFI9 Series

Catalog

MOSFET P-CH 60V 8.5A TO220-3

Part	Package / Case	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division IRFI9Z24G	TO-220-3 Full Pack Isolated Tab	TO-220-3	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	570 pF	20 V	60 V	P-Channel	37 W	8.5 A	19 nC	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRFI9Z14G	TO-220-3 Full Pack Isolated Tab	TO-220-3	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	270 pF	20 V	60 V	P-Channel		5.3 A		-55 °C	175 ░C	12 nC	27 W	500 mOhm
Vishay General Semiconductor - Diodes Division IRFI9Z24GPBF	TO-220-3 Full Pack Isolated Tab	TO-220-3	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	570 pF	20 V	60 V	P-Channel	37 W	8.5 A	19 nC	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRFI9Z34GPBF	TO-220-3 Full Pack Isolated Tab	TO-220-3	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	1100 pF	20 V	60 V	P-Channel		12 A	34 nC	-55 °C	175 ░C		42 W		140 mOhm