SI4834 Series

Catalog

MOSFET 2N-CH 30V 8A 8SOIC

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4834CDY-T1-GE3	8 A	2 N-Channel (Dual)	8-SOIC	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	MOSFET (Metal Oxide)	950 pF	20 mOhm	30 V	25 nC	3 V	Surface Mount	2.9 W
Vishay General Semiconductor - Diodes Division SI4834CDY-T1-E3	8 A	2 N-Channel (Dual)	8-SOIC	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	MOSFET (Metal Oxide)	950 pF	20 mOhm	30 V	25 nC	3 V	Surface Mount	2.9 W
Vishay General Semiconductor - Diodes Division SI4834BDY-T1-GE3	5.7 A	2 N-Channel (Dual)	8-SOIC	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	MOSFET (Metal Oxide)			30 V		3 V	Surface Mount	1.1 W	Logic Level Gate	11 nC	22 mOhm
Vishay General Semiconductor - Diodes Division SI4834BDY-T1-E3	5.7 A	2 N-Channel (Dual)	8-SOIC	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	MOSFET (Metal Oxide)			30 V		3 V	Surface Mount	1.1 W	Logic Level Gate	11 nC	22 mOhm