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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Package / Case | Package / Case | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | DFN0603-3 (SOT8013) | 0603 Metric | 0201 | Surface Mount | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | 144 pF | 900 mV | 1.3 A | 210 mOhm | 1.8 V 4.5 V | 4.7 W 300 mW | 12 V | N-Channel | 2.3 nC |